| Thermally stable, high performance transfer doping of diamond using transition metal oxides KG Crawford, D Qi, J McGlynn, TG Ivanov, PB Shah, J Weil, A Tallaire, ... Scientific Reports 8 (1), 3342, 2018 | 57 | 2018 |
| Method for limiting divot formation in post shallow trench isolation processes PH Bartlau, MW Cantell, JB Lasky, JD Weil US Patent 6,541,351, 2003 | 35 | 2003 |
| Backside protection films FD Baker, CJ Grant, MH Ishaq, JM Sharrow, JD Weil US Patent 6,670,283, 2003 | 29 | 2003 |
| Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length KG Crawford, JD Weil, PB Shah, DA Ruzmetov, MR Neupane, K Kingkeo, ... IEEE Transactions on Electron Devices 67 (6), 2270-2275, 2020 | 28 | 2020 |
| Heterogeneous nucleation of coherently strained islands during epitaxial growth of Ge on Si (110) M Krishnamurthy, BK Yang, JD Weil, CG Slough Applied physics letters 70 (1), 49-51, 1997 | 27 | 1997 |
| Temperature dependence of SiGe coherent island formation on Si (100): Anomalous reentrant behavior X Deng, JD Weil, M Krishnamurthy Physical review letters 80 (21), 4721, 1998 | 24 | 1998 |
| Preferential nucleation of Ge islands at self-organized pits formed during the growth of thin Si buffer layers on Si (110) JD Weil, X Deng, M Krishnamurthy Journal of applied physics 83 (1), 212-216, 1998 | 24 | 1998 |
| Systematic comparison of various oxidation treatments on diamond surface C Li, X Zhang, EF Oliveira, AB Puthirath, MR Neupane, JD Weil, ... Carbon 182, 725-734, 2021 | 23 | 2021 |
| Structural and electronic properties of 2D (graphene, hBN)/H-terminated diamond (100) heterostructures PS Mirabedini, B Debnath, MR Neupane, P Alex Greaney, ... Applied Physics Letters 117 (12), 2020 | 21 | 2020 |
| Diamond RF Transistor Technology with ft=41 GHz and fmax=44 GHz TG Ivanov, J Weil, PB Shah, AG Birdwell, K Kingkeo, EA Viveiros 2018 IEEE/MTT-S International Microwave Symposium-IMS, 1461-1463, 2018 | 21 | 2018 |
| Thermal performance of diamond field-effect transistors SC James Spencer Lundh, Daniel Shoemaker, A. Glen Birdwell, James D. Weil ... Applied Physics Letters 119 (14), 143502-1, 2021 | 10 | 2021 |
| A hardmask STI etch process for 0.13/spl mu/m logic technology and beyond J Wong, J Weil, C Whiting, C Yu, B Porth, J Hart, G Matteson, H Mochiki, ... 2001 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (IEEE Cat. No …, 2001 | 9 | 2001 |
| Charge trapping analysis of high speed diamond FETs PB Shah, J Weil, AG Birdwell, T Ivanov MRS Advances 2 (41), 2235-2240, 2017 | 8 | 2017 |
| Thermally stable, high performance transfer doping of diamond using transition metal oxides, Sci. Rep. 8 (2018) 3342 KG Crawford, D Qi, J Mcglynn, TG Ivanov, PB Shah, J Weil, A Tallaire, ... | 4 | |
| Amination of boron-doped diamond surfaces C Li, EF Oliveira, X Zhang, A Biswas, S Roy, AB Puthirath, DA Ruzmetov, ... Chemistry of materials 34 (16), 7190-7200, 2022 | 3 | 2022 |
| Stability of oxygenated groups on pristine and defective diamond surfaces E Oliveira, C Li, X Zhang, A Puthirath, MR Neupane, J Weil, AG Birdwell, ... MRS Advances 7 (25), 543-546, 2022 | 2 | 2022 |
| Neural network-based study of structural, chemical and electronic properties of doped MR Neupane, J Cruz, JD Weil, MN Groves Journal of Materials Research 36 (23), 4703-4711, 2021 | 2 | 2021 |
| p-Diamond as a plasmonic material for terahertz applications S Rudin, G Rupper, T Ivanov, J Weil, MS Shur Radar Sensor Technology XXV 11742, 117420R, 2021 | 2 | 2021 |
| Low Energy Transition of GeTe RF Phase Change Switches L De La Cruz, T Ivanov, AG Birdwell, JD Weil, K Kingkeo, M Zaghloul IEEE Transactions on Electron Devices, 2023 | | 2023 |
| The Effect of Hydrogen, Hydroxyl, and Oxygen Surface Coverage on Structural and Electronic Properties of Diamond (100) Surfaces J Cruz, D Ruzmetov, AG Birdwell, E Garratt, J Weil, P Shah, T Ivanov, ... APS March Meeting Abstracts 2023, T00. 102, 2023 | | 2023 |
Tony IvanovUS Army Research LaboratoryVerified email at ieee.org
