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Jaidah Mohan
Jaidah Mohan
Senior Process Development Engineer
Verified email at micron.com
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Year
Large ferroelectric polarization of TiN/Hf0. 5Zr0. 5O2/TiN capacitors due to stress-induced crystallization at low thermal budget
SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, HS Kim, YC Byun, ...
Applied Physics Letters 111 (24), 2017
2952017
Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances
SJ Kim, J Mohan, SR Summerfelt, J Kim
Jom 71, 246-255, 2019
2882019
Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400° C) Hf0. 5Zr0. 5O2 films
SJ Kim, J Mohan, J Lee, JS Lee, AT Lucero, CD Young, L Colombo, ...
Applied Physics Letters 112 (17), 2018
1402018
Low-voltage operation and high endurance of 5-nm ferroelectric Hf0. 5Zr0. 5O2 capacitors
SJ Kim, J Mohan, HS Kim, J Lee, CD Young, L Colombo, SR Summerfelt, ...
Applied Physics Letters 113 (18), 2018
682018
A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films
SJ Kim, J Mohan, HS Kim, SM Hwang, N Kim, YC Jung, A Sahota, K Kim, ...
Materials 13 (13), 2968, 2020
412020
Low‐thermal‐budget fluorite‐structure ferroelectrics for future electronic device applications
HJ Kim, Y An, YC Jung, J Mohan, JG Yoo, YI Kim, H Hernandez-Arriaga, ...
physica status solidi (RRL)–Rapid Research Letters 15 (5), 2100028, 2021
352021
Stress-Induced Crystallization of Thin Hf1–XZrXO2 Films: The Origin of Enhanced Energy Density with Minimized Energy Loss for Lead-Free Electrostatic …
SJ Kim, J Mohan, JS Lee, HS Kim, J Lee, CD Young, L Colombo, ...
ACS applied materials & interfaces 11 (5), 5208-5214, 2019
322019
Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0. 5Zr0. 5O2/TiN capacitors
SJ Kim, J Mohan, HS Kim, J Lee, SM Hwang, D Narayan, JG Lee, ...
Applied Physics Letters 115 (18), 2019
312019
Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1− xO2/ZrO2 bilayer by atomic layer deposition
T Onaya, T Nabatame, M Inoue, YC Jung, H Hernandez-Arriaga, J Mohan, ...
Applied Physics Letters 117 (23), 2020
292020
Atomic layer deposition of layered boron nitride for large-area 2D electronics
J Lee, AV Ravichandran, J Mohan, L Cheng, AT Lucero, H Zhu, Z Che, ...
ACS applied materials & interfaces 12 (32), 36688-36694, 2020
282020
Ferroelectric TiN/Hf0. 5Zr0. 5O2/TiN capacitors with low-voltage operation and high reliability for next-generation FRAM applications
SJ Kim, J Mohan, CD Young, L Colombo, J Kim, SR Summerfelt, T San
2018 IEEE International Memory Workshop (IMW), 1-4, 2018
262018
Ferroelectric polarization retention with scaling of Hf0. 5Zr0. 5O2 on silicon
J Mohan, H Hernandez-Arriaga, YC Jung, T Onaya, CY Nam, EHR Tsai, ...
Applied Physics Letters 118 (10), 2021
242021
Low-thermal-budget (300° C) ferroelectric TiN/Hf0. 5Zr0. 5O2/TiN capacitors realized using high-pressure annealing
SJ Kim, YC Jung, J Mohan, HJ Kim, SM Rho, MS Kim, JG Yoo, HR Park, ...
Applied Physics Letters 119 (24), 2021
202021
Low temperature thermal atomic layer deposition of aluminum nitride using hydrazine as the nitrogen source
YC Jung, SM Hwang, DN Le, ALN Kondusamy, J Mohan, SW Kim, JH Kim, ...
Materials 13 (15), 3387, 2020
182020
Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1− xO2 thin films using synchrotron x-ray analysis
T Onaya, T Nabatame, YC Jung, H Hernandez-Arriaga, J Mohan, HS Kim, ...
APL Materials 9 (3), 2021
152021
Improvement of ferroelectricity and fatigue property of thicker HfxZr1− xO2/ZrO2 bi-layer
T Onaya, T Nabatame, M Inoue, YC Jung, H Hernandez-Arriaga, J Mohan, ...
ECS Transactions 98 (3), 63, 2020
142020
Low temperature (400° C) ferroelectric Hf0. 5Zr0. 5O2 capacitors for next-generation FRAM applications
SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, CD Young, J Kim, ...
2017 IEEE International Memory Workshop (IMW), 1-4, 2017
142017
Extremely Low Leakage Threshold Switch with Enhanced Characteristics via Ag Doping on Polycrystalline ZnO Fabricated by Facile Electrochemical Deposition for …
HS Kim, A Sahota, J Mohan, AT Lucero, Y Chan Jung, M Kim, JS Lee, ...
ACS Applied Electronic Materials 3 (5), 2309-2316, 2021
92021
Robust low-temperature (350° C) ferroelectric Hf0. 5Zr0. 5O2 fabricated using anhydrous H2O2 as the ALD oxidant
YC Jung, JH Kim, H Hernandez-Arriaga, J Mohan, SM Hwang, DN Le, ...
Applied Physics Letters 121 (22), 2022
62022
Relaxation Induced by Imprint Phenomena in Low-Temperature (400 °C) Processed Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitors
J Mohan, YC Jung, H Hernandez-Arriaga, JH Kim, T Onaya, A Sahota, ...
ACS Applied Electronic Materials 4 (4), 1405-1414, 2022
62022
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