Leonard Brillson
Leonard Brillson
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The structure and properties of metal-semiconductor interfaces
LJ Brillson
Surface Science Reports 2 (2), 123-326, 1982
ZnO Schottky barriers and Ohmic contacts
LJ Brillson, Y Lu
Journal of Applied Physics 109 (12), 8, 2011
Transition in Schottky barrier formation with chemical reactivity
LJ Brillson
Physical Review Letters 40 (4), 260, 1978
Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO
HL Mosbacker, YM Strzhemechny, BD White, PE Smith, DC Look, ...
Applied Physics Letters 87 (1), 012102, 2005
Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO
DC Look, KD Leedy, L Vines, BG Svensson, A Zubiaga, F Tuomisto, ...
Physical Review B 84 (11), 115202, 2011
Characterization of electronic structure and defect states of thin epitaxial films by UV-visible absorption and cathodoluminescence spectroscopies
AJ Hauser, J Zhang, L Mier, RA Ricciardo, PM Woodward, TL Gustafson, ...
Applied Physics Letters 92 (22), 222901, 2008
Contacts to semiconductors: fundamentals and technology
LJ Brillson
William Andrew, 1993
Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors
X Hu, AP Karmarkar, B Jun, DM Fleetwood, RD Schrimpf, RD Geil, ...
IEEE Transactions on Nuclear Science 50 (6), 1791-1796, 2003
Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation
RS Okojie, M Xhang, P Pirouz, S Tumakha, G Jessen, LJ Brillson
Applied Physics Letters 79 (19), 3056-3058, 2001
Dominant effect of near-interface native point defects on ZnO Schottky barriers
LJ Brillson, HL Mosbacker, MJ Hetzer, Y Strzhemechny, GH Jessen, ...
Applied Physics Letters 90 (10), 102116, 2007
Remote hydrogen plasma doping of single crystal ZnO
YM Strzhemechny, HL Mosbacker, DC Look, DC Reynolds, CW Litton, ...
Applied physics letters 84 (14), 2545-2547, 2004
Direct observation of copper depletion and potential changes at copper indium gallium diselenide grain boundaries
MJ Hetzer, YM Strzhemechny, M Gao, MA Contreras, A Zunger, ...
Applied Physics Letters 86 (16), 162105, 2005
Direct observation of a two-dimensional hole gas at oxide interfaces
H Lee, N Campbell, J Lee, TJ Asel, TR Paudel, H Zhou, JW Lee, ...
Nature materials 17 (3), 231-236, 2018
Electronic structure of tantalum oxynitride perovskite photocatalysts
S Balaz, SH Porter, PM Woodward, LJ Brillson
Chemistry of Materials 25 (16), 3337-3343, 2013
Vacancy defect and defect cluster energetics in ion-implanted ZnO
Y Dong, F Tuomisto, BG Svensson, AY Kuznetsov, LJ Brillson
Physical Review B 81 (8), 081201, 2010
Chemical reaction and charge redistribution at metal–semiconductor interfaces
LJ Brillson
Journal of Vacuum Science and Technology 15 (4), 1378-1383, 1978
Chemically induced charge redistribution at Al-GaAs interfaces
LJ Brillson, RZ Bachrach, RS Bauer, J McMenamin
Physical Review Letters 42 (6), 397, 1979
Electron energy loss spectroscopy and the optical properties of polymethylmethacrylate from 1 to 300 eV
JJ Ritsko, LJ Brillson, RW Bigelow, TJ Fabish
The Journal of Chemical Physics 69 (9), 3931-3939, 1978
Optical signatures of deep level defects in Ga2O3
H Gao, S Muralidharan, N Pronin, MR Karim, SM White, T Asel, G Foster, ...
Applied Physics Letters 112 (24), 242102, 2018
Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers
AP Karmarkar, B Jun, DM Fleetwood, RD Schrimpf, RA Weller, BD White, ...
IEEE Transactions on Nuclear Science 51 (6), 3801-3806, 2004
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