| The structure and properties of metal-semiconductor interfaces LJ Brillson Surface Science Reports 2 (2), 123-326, 1982 | 1097 | 1982 |
| ZnO Schottky barriers and Ohmic contacts LJ Brillson, Y Lu Journal of Applied Physics 109 (12), 8, 2011 | 726 | 2011 |
| Transition in Schottky barrier formation with chemical reactivity LJ Brillson Physical Review Letters 40 (4), 260, 1978 | 325 | 1978 |
| Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO HL Mosbacker, YM Strzhemechny, BD White, PE Smith, DC Look, ... Applied Physics Letters 87 (1), 012102, 2005 | 286 | 2005 |
| Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO DC Look, KD Leedy, L Vines, BG Svensson, A Zubiaga, F Tuomisto, ... Physical Review B 84 (11), 115202, 2011 | 216 | 2011 |
| Characterization of electronic structure and defect states of thin epitaxial films by UV-visible absorption and cathodoluminescence spectroscopies AJ Hauser, J Zhang, L Mier, RA Ricciardo, PM Woodward, TL Gustafson, ... Applied Physics Letters 92 (22), 222901, 2008 | 205 | 2008 |
| Contacts to semiconductors: fundamentals and technology LJ Brillson William Andrew, 1993 | 185 | 1993 |
| Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors X Hu, AP Karmarkar, B Jun, DM Fleetwood, RD Schrimpf, RD Geil, ... IEEE Transactions on Nuclear Science 50 (6), 1791-1796, 2003 | 184 | 2003 |
| Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation RS Okojie, M Xhang, P Pirouz, S Tumakha, G Jessen, LJ Brillson Applied Physics Letters 79 (19), 3056-3058, 2001 | 184 | 2001 |
| Dominant effect of near-interface native point defects on ZnO Schottky barriers LJ Brillson, HL Mosbacker, MJ Hetzer, Y Strzhemechny, GH Jessen, ... Applied Physics Letters 90 (10), 102116, 2007 | 182 | 2007 |
| Remote hydrogen plasma doping of single crystal ZnO YM Strzhemechny, HL Mosbacker, DC Look, DC Reynolds, CW Litton, ... Applied physics letters 84 (14), 2545-2547, 2004 | 168 | 2004 |
| Direct observation of copper depletion and potential changes at copper indium gallium diselenide grain boundaries MJ Hetzer, YM Strzhemechny, M Gao, MA Contreras, A Zunger, ... Applied Physics Letters 86 (16), 162105, 2005 | 164 | 2005 |
| Direct observation of a two-dimensional hole gas at oxide interfaces H Lee, N Campbell, J Lee, TJ Asel, TR Paudel, H Zhou, JW Lee, ... Nature materials 17 (3), 231-236, 2018 | 161 | 2018 |
| Electronic structure of tantalum oxynitride perovskite photocatalysts S Balaz, SH Porter, PM Woodward, LJ Brillson Chemistry of Materials 25 (16), 3337-3343, 2013 | 149 | 2013 |
| Vacancy defect and defect cluster energetics in ion-implanted ZnO Y Dong, F Tuomisto, BG Svensson, AY Kuznetsov, LJ Brillson Physical Review B 81 (8), 081201, 2010 | 140 | 2010 |
| Chemical reaction and charge redistribution at metal–semiconductor interfaces LJ Brillson Journal of Vacuum Science and Technology 15 (4), 1378-1383, 1978 | 139 | 1978 |
| Chemically induced charge redistribution at Al-GaAs interfaces LJ Brillson, RZ Bachrach, RS Bauer, J McMenamin Physical Review Letters 42 (6), 397, 1979 | 135 | 1979 |
| Electron energy loss spectroscopy and the optical properties of polymethylmethacrylate from 1 to 300 eV JJ Ritsko, LJ Brillson, RW Bigelow, TJ Fabish The Journal of Chemical Physics 69 (9), 3931-3939, 1978 | 132 | 1978 |
| Optical signatures of deep level defects in Ga2O3 H Gao, S Muralidharan, N Pronin, MR Karim, SM White, T Asel, G Foster, ... Applied Physics Letters 112 (24), 242102, 2018 | 124 | 2018 |
| Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers AP Karmarkar, B Jun, DM Fleetwood, RD Schrimpf, RA Weller, BD White, ... IEEE Transactions on Nuclear Science 51 (6), 3801-3806, 2004 | 113 | 2004 |
