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Joy S. Lee
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Large ferroelectric polarization of TiN/Hf0. 5Zr0. 5O2/TiN capacitors due to stress-induced crystallization at low thermal budget
SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, HS Kim, YC Byun, ...
Applied Physics Letters 111 (24), 2017
2442017
Atomic layer deposition of silicon nitride thin films: a review of recent progress, challenges, and outlooks
X Meng, YC Byun, HS Kim, JS Lee, AT Lucero, L Cheng, J Kim
Materials 9 (12), 1007, 2016
1202016
Low temperature (400 C) ferroelectric Hf0. 5Zr0. 5O2 capacitors for next-generation FRAM applications
SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, CD Young, J Kim, ...
2017 IEEE International Memory Workshop (IMW), 1-4, 2017
122017
Inversion behavior of ALD HfZrO2/InGaAs MOS capacitors with in-situ DEZ-H2O treatment
JG Lee, YC Byun, D Narayan, AT Lucero, J Kim
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