John Dallesasse
John Dallesasse
Professor of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign
Verified email at illinois.edu
Title
Cited by
Cited by
Year
Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices
JM Dallesasse, N Holonyak Jr, AR Sugg, TA Richard, N El‐Zein
Applied Physics Letters 57 (26), 2844-2846, 1990
7431990
Native‐oxide stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers
JM Dallesasse, N Holonyak Jr
Applied Physics Letters 58 (4), 394-396, 1991
1511991
Optical transceiver for 40 gigabit/second transmission
J Dallesasse
US Patent 7,941,053, 2011
1192011
Method and system for hybrid integration of an opto-electronic integrated circuit
J Dallesasse, SB Krasulick, W Kozlovsky
US Patent 8,368,995, 2013
1172013
Native oxide stabilization of AlAs‐GaAs heterostructures
AR Sugg, N Holonyak Jr, JE Baker, FA Kish, JM Dallesasse
Applied physics letters 58 (11), 1199-1201, 1991
1151991
AlGaAs native oxide
N Holonyak Jr, JM Dallesasse
US Patent 5,262,360, 1993
1111993
Planar native‐oxide index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers
FA Kish, SJ Caracci, N Holonyak Jr, JM Dallesasse, KC Hsieh, MJ Ries
Applied physics letters 59 (14), 1755-1757, 1991
1051991
Environmental degradation of AlxGa1−xAs‐GaAs quantum‐well heterostructures
JM Dallesasse, N El‐Zein, N Holonyak Jr, KC Hsieh, RD Burnham, ...
Journal of applied physics 68 (5), 2235-2238, 1990
881990
Method and system for heterogeneous substrate bonding of waveguide receivers
SB Krasulick, J Dallesasse
US Patent 8,611,388, 2013
862013
Properties and use of ln 0.5 (Al x Ga 1-x) 0.5 P and Al x Ga 1-x as native oxides in heterostructure lasers
FA Kish, J Caracci, N Holonyak, KC Hsieh, JE Baker, SA Maranowski, ...
Journal of electronic materials 21 (12), 1133-1139, 1992
86*1992
Integrated tunable CMOS laser
T Creazzo, E Marchena, SB Krasulick, KL Paul, D Van Orden, JY Spann, ...
Optics express 21 (23), 28048-28053, 2013
822013
Method and system of heterogeneous substrate bonding for photonic integration
SB Krasulick, J Dallesasse
US Patent 8,630,326, 2014
792014
Stability of AlAs in AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures
JM Dallesasse, P Gavrilovic, N Holonyak Jr, RW Kaliski, DW Nam, ...
Applied physics letters 56 (24), 2436-2438, 1990
701990
Impurity diffusion and layer interdiffusion in AlxGa1−xAs‐GaAs heterostructures
DG Deppe, N Holonyak Jr, WE Plano, VM Robbins, JM Dallesasse, ...
Journal of applied physics 64 (4), 1838-1844, 1988
691988
Semiconductor devices with native aluminum oxide regions
N Holonyak Jr, JM Dallesasse
US Patent 5,373,522, 1994
641994
Method and system for template assisted wafer bonding
J Dallesasse, SB Krasulick
US Patent 8,222,084, 2012
602012
6-Aryl-4-aminopicolinates and their use as herbicides
TW Balko, AM Buysse, JB Epp, SC Fields, CT Lowe, RJ Keese, ...
US Patent 6,784,137, 2004
602004
Method and system for hybrid integration of a tunable laser
J Dallesasse, SB Krasulick, W Kozlovsky
US Patent 8,615,025, 2013
592013
Method for making aluminum gallium arsenide semiconductor device with native oxide layer
N Holonyak Jr, JM Dallesasse
US Patent 5,696,023, 1997
591997
Optical transceiver for 100 gigabit/second transmission
J Dallesasse
US Patent 7,380,993, 2008
542008
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