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Philip M Campbell
Philip M Campbell
Verified email at gatech.edu
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Cited by
Cited by
Year
Controlled Doping of Large‐Area Trilayer MoS2 with Molecular Reductants and Oxidants
A Tarasov, S Zhang, MY Tsai, PM Campbell, S Graham, S Barlow, ...
Advanced Materials 27 (7), 1175-1181, 2015
2212015
Flexible MoS2 field-effect transistors for gate-tunable piezoresistive strain sensors
MY Tsai, A Tarasov, ZR Hesabi, H Taghinejad, PM Campbell, CA Joiner, ...
ACS applied materials & interfaces 7 (23), 12850-12855, 2015
1632015
Highly Uniform Trilayer Molybdenum Disulfide for Wafer‐Scale Device Fabrication
A Tarasov, PM Campbell, MY Tsai, ZR Hesabi, J Feirer, S Graham, ...
Advanced Functional Materials 24 (40), 6389-6400, 2014
1302014
Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe 2
PM Campbell, A Tarasov, CA Joiner, MY Tsai, G Pavlidis, S Graham, ...
Nanoscale 8 (4), 2268-2276, 2016
712016
Enhanced Resonant Tunneling in Symmetric 2D Semiconductor Vertical Heterostructure Transistors
PM Campbell, A Tarasov, CA Joiner, WJ Ready, EM Vogel
ACS nano 9 (5), 5000-5008, 2015
712015
In situ thermal oxidation kinetics in few layer MoS2
R Rao, AE Islam, PM Campbell, EM Vogel, B Maruyama
2D Materials 4 (2), 025058, 2017
602017
Resonant Light-Induced Heating in Hybrid Cavity-Coupled 2D Transition-Metal Dichalcogenides
H Taghinejad, M Taghinejad, A Tarasov, MY Tsai, AH Hosseinnia, ...
ACS Photonics 3 (4), 700-707, 2016
332016
Solution-Processed Doping of Trilayer WSe2 with Redox-Active Molecules
MY Tsai, S Zhang, PM Campbell, RR Dasari, X Ba, A Tarasov, S Graham, ...
Chemistry of Materials 29 (17), 7296-7304, 2017
282017
Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures
PM Campbell, A Tarasov, CA Joiner, WJ Ready, EM Vogel
Journal of Applied Physics 119 (2), 024503, 2016
262016
Gold Nanoparticles on Oxide-Free Silicon–Molecule Interface for Single Electron Transport
L Caillard, O Seitz, PM Campbell, RP Doherty, AF Lamic-Humblot, ...
Langmuir 29 (16), 5066-5073, 2013
232013
Graphene-Molybdenum Disulfide-Graphene Tunneling Junctions with Large-Area Synthesized Materials
CA Joiner, PM Campbell, AA Tarasov, BR Beatty, CJ Perini, MY Tsai, ...
ACS Applied Materials & Interfaces 8 (13), 8702-8709, 2016
222016
Material Constraints and Scaling of 2-D Vertical Heterostructure Interlayer Tunnel Field-Effect Transistors
PM Campbell, JK Smith, WJ Ready, EM Vogel
IEEE Transactions on Electron Devices 64 (6), 2714-2720, 2017
142017
Controlling the reproducibility of Coulomb blockade phenomena for gold nanoparticles on an organic monolayer/silicon system
L Caillard, S Sattayaporn, AF Lamic-Humblot, S Casale, P Campbell, ...
Nanotechnology 26 (6), 065301, 2015
112015
Comparative time-resolved study of the XeF2 etching of Mo and Si
JF Veyan, D Aureau, Y Gogte, P Campbell, XM Yan, YJ Chabal
Journal of Applied Physics 108 (11), 114913, 2010
92010
Atomically-precise three-dimensional top down fabrication
JB Ballard, JHG Owen, E Fuchs, S McDonnell, D Dick, G Mordi, A Azcatl, ...
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS …, 2013
32013
Synthesis of Large-Area Two-Dimensional Materials for Vertical Heterostructures
PM Campbell
Georgia Institute of Technology, 2017
22017
Piezoresistive strain sensing with flexible MoS2 field-effect transistors
A Tarasov, MY Tsai, H Taghinejad, PM Campbell, A Adibi, EM Vogel
Device Research Conference (DRC), 2015 73rd Annual, 159-160, 2015
12015
In Situ Thermal Oxidation Kinetics in Few Layer MoS2 (Postprint)
R Rao, AE Islam, B Maruyama, PM Campbell, EM Vogel
UES, Inc. Beavercreek United States, 2017
2017
A path toward single electron devices: Chemical functionalization of Si (111) to achieve single electron transport through double tunnel junctions
PM Campbell
The University of Texas at Dallas, 2013
2013
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