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David Niegemann
David Niegemann
Néel Institute - CNRS
Verified email at neel.cnrs.fr
Title
Cited by
Cited by
Year
Gate-based high fidelity spin readout in a CMOS device
M Urdampilleta, DJ Niegemann, E Chanrion, B Jadot, C Spence, ...
Nature nanotechnology 14 (8), 737-741, 2019
1372019
Charge detection in an array of CMOS quantum dots
E Chanrion, DJ Niegemann, B Bertrand, C Spence, B Jadot, J Li, ...
Physical Review Applied 14 (2), 024066, 2020
642020
Spin quintet in a silicon double quantum dot: Spin blockade and relaxation
T Lundberg, J Li, L Hutin, B Bertrand, DJ Ibberson, CM Lee, ...
Physical Review X 10 (4), 041010, 2020
292020
Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays
L Hutin, B Bertrand, E Chanrion, H Bohuslavskyi, F Ansaloni, TY Yang, ...
2019 IEEE International Electron Devices Meeting (IEDM), 37.7. 1-37.7. 4, 2019
252019
Parity and singlet-triplet high-fidelity readout in a silicon double quantum dot at 0.5 K
DJ Niegemann, V El-Homsy, B Jadot, M Nurizzo, B Cardoso-Paz, ...
PRX Quantum 3 (4), 040335, 2022
132022
Spin-valley coupling anisotropy and noise in CMOS quantum dots
C Spence, BC Paz, B Klemt, E Chanrion, DJ Niegemann, B Jadot, ...
Physical Review Applied 17 (3), 034047, 2022
92022
Complete readout of two-electron spin states in a double quantum dot
M Nurizzo, B Jadot, PA Mortemousque, V Thiney, E Chanrion, ...
PRX Quantum 4 (1), 010329, 2023
82023
Challenges and perspectives in the modeling of spin qubits
YM Niquet, L Hutin, BM Diaz, B Venitucci, J Li, V Michal, ...
2020 IEEE International Electron Devices Meeting (IEDM), 30.1. 1-30.1. 4, 2020
82020
Qubit read-out in Semiconductor quantum processors: challenges and perspectives
T Meunier, M Urdampilleta, D Niegemann, B Jadot, E Charion, ...
2019 IEEE International Electron Devices Meeting (IEDM), 31.6. 1-31.6. 4, 2019
62019
Probing Low-Frequency Charge Noise in Few-Electron CMOS Quantum Dots
C Spence, B Cardoso Paz, V Michal, E Chanrion, DJ Niegemann, B Jadot, ...
Physical Review Applied 19 (4), 044010, 2023
42023
Probing charge noise in few electron CMOS quantum dots
C Spence, B Cardoso-Paz, V Michal, E Chanrion, DJ Niegemann, B Jadot, ...
arXiv preprint arXiv:2209.01853, 2022
22022
Broadband parametric amplification for multiplexed SiMOS quantum dot signals
V Elhomsy, L Planat, DJ Niegemann, B Cardoso-Paz, A Badreldin, ...
arXiv preprint arXiv:2307.14717, 2023
12023
Coupling control in the few-electron regime of quantum dot arrays using 2-metal gate levels in CMOS technology
BC Paz, V El-Homsy, DJ Niegemann, B Klemt, E Chanrion, V Thiney, ...
ESSCIRC 2022-IEEE 48th European Solid State Circuits Conference (ESSCIRC), 45-48, 2022
12022
Broadband parametric amplification for multiplexed SiMOS spin qubit readout
V Elhomsy, D Niegemann, L Planat, E Chanrion, M Nurizzo, B Jadot, ...
APS March Meeting Abstracts 2023, N72. 004, 2023
2023
Influence of charge noise on foundry-fabricated spin qubit
V El-Homsy, B Klemt, V Thiney, R Lethiecq, C Spence, B Cardoso-Paz, ...
APS March Meeting Abstracts 2023, S74. 002, 2023
2023
Lecture haute fidélité des spins d'électrons dans les boîtes quantiques silicium mos high fidelity readout of electron spins in silicon mos quantum dots
D NIEGEMANN
Universität Basel, 2022
2022
high fidelity readout of electron spins in silicon mos quantum dots
D Niegemann
Université Grenoble Alpes [2020-....], 2022
2022
Lecture haute fidélité des spins d'électrons dans les boîtes quantiques silicium mos
D Niegemann
2022
Observation of disorder-induced decoherence for individual electron spins in moving quantum dots
B Jadot, M Nurizzo, PA Mortemousque, E Chanrion, D Niegemann, ...
APS March Meeting Abstracts 2022, D39. 012, 2022
2022
Efficient and complete spin state readout of two electrons in a double quantum dot
M Nurizzo, B Jadot, PA Mortemousque, V Thiney, E Chanrion, M Dartiailh, ...
APS March Meeting Abstracts 2022, T36. 009, 2022
2022
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