HongWen Jiang
HongWen Jiang
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Cited by
Cited by
Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures
R Vrijen, E Yablonovitch, K Wang, HW Jiang, A Balandin, ...
Physical Review A 62 (1), 012306, 2000
Quantum liquid versus electron solid around ν= 1/5 Landau-level filling
HW Jiang, RL Willett, HL Stormer, DC Tsui, LN Pfeiffer, KW West
Physical review letters 65 (5), 633, 1990
Electrical detection of the spin resonance of a single electron in a silicon field-effect transistor
M Xiao, I Martin, E Yablonovitch, HW Jiang
Nature 430 (6998), 435-439, 2004
Magnetic-field-driven destruction of quantum Hall states in a double quantum well
GS Boebinger, HW Jiang, LN Pfeiffer, KW West
Physical review letters 64 (15), 1793, 1990
Ultralow-current-density and bias-field-free spin-transfer nano-oscillator
Z Zeng, G Finocchio, B Zhang, PK Amiri, JA Katine, IN Krivorotov, Y Huai, ...
Scientific reports 3 (1), 1426, 2013
Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory
H Zhao, A Lyle, Y Zhang, PK Amiri, G Rowlands, Z Zeng, J Katine, H Jiang, ...
Journal of Applied Physics 109 (7), 2011
Observation of magnetic-field-induced delocalization: Transition from Anderson insulator to quantum Hall conductor
HW Jiang, CE Johnson, KL Wang, ST Hannahs
Physical review letters 71 (9), 1439, 1993
Spin transfer nano-oscillators
Z Zeng, G Finocchio, H Jiang
Nanoscale 5 (6), 2219-2231, 2013
Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions
P Khalili Amiri, ZM Zeng, J Langer, H Zhao, G Rowlands, YJ Chen, ...
Applied Physics Letters 98 (11), 2011
Ultrafast universal quantum control of a quantum-dot charge qubit using Landau–Zener–Stückelberg interference
G Cao, HO Li, T Tu, L Wang, C Zhou, M Xiao, GC Guo, HW Jiang, GP Guo
Nature Communications 4 (1), 1401, 2013
Magnetotransport studies of the insulating phase around ν= 1/5 Landau-level filling
HW Jiang, HL Stormer, DC Tsui, LN Pfeiffer, KW West
Physical Review B 44 (15), 8107, 1991
Measurement of the spin relaxation time of single electrons in a silicon metal-oxide-semiconductor-based quantum dot
M Xiao, MG House, HW Jiang
Physical review letters 104 (9), 096801, 2010
Giant spin-torque diode sensitivity in the absence of bias magnetic field
B Fang, M Carpentieri, X Hao, H Jiang, JA Katine, IN Krivorotov, B Ocker, ...
Nature communications 7 (1), 11259, 2016
Thermodynamic signature of a two-dimensional metal-insulator transition
SC Dultz, HW Jiang
Physical Review Letters 84 (20), 4689, 2000
Transport anomalies in the lowest Landau level of two-dimensional electrons at half-filling
HW Jiang, HL Stormer, DC Isui, LN Pfeiffer, KW West
Physical Review B 40 (17), 12013, 1989
High-power coherent microwave emission from magnetic tunnel junction nano-oscillators with perpendicular anisotropy
Z Zeng, PK Amiri, IN Krivorotov, H Zhao, G Finocchio, JP Wang, JA Katine, ...
ACS nano 6 (7), 6115-6121, 2012
A graphene quantum dot with a single electron transistor as an integrated charge sensor
LJ Wang, G Cao, T Tu, HO Li, C Zhou, XJ Hao, Z Su, GC Guo, HW Jiang, ...
Applied Physics Letters 97 (26), 2010
Gate-controlled electron spin resonance in heterostructures
HW Jiang, E Yablonovitch
Physical Review B 64 (4), 041307, 2001
Screening of the Coulomb interaction in two-dimensional variable-range hopping
FW Van Keuls, XL Hu, HW Jiang, AJ Dahm
Physical Review B 56 (3), 1161, 1997
Electron spin resonance and spin–valley physics in a silicon double quantum dot
X Hao, R Ruskov, M Xiao, C Tahan, HW Jiang
Nature communications 5 (1), 3860, 2014
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