| MoS2 transistors with 1-nanometer gate lengths SB Desai, SR Madhvapathy, AB Sachid, JP Llinas, Q Wang, GH Ahn, ... Science 354 (6308), 99-102, 2016 | 1420 | 2016 |
| Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides H Fang, C Battaglia, C Carraro, S Nemsak, B Ozdol, JS Kang, HA Bechtel, ... Proceedings of the National Academy of Sciences 111 (17), 6198-6202, 2014 | 1163 | 2014 |
| Field-effect transistors built from all two-dimensional material components T Roy, M Tosun, JS Kang, AB Sachid, SB Desai, M Hettick, CC Hu, ... ACS nano 8 (6), 6259-6264, 2014 | 764 | 2014 |
| Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe2 SB Desai, G Seol, JS Kang, H Fang, C Battaglia, R Kapadia, JW Ager, ... Nano letters 14 (8), 4592-4597, 2014 | 687 | 2014 |
| Gold‐Mediated Exfoliation of Ultralarge Optoelectronically‐Perfect Monolayers SB Desai*, SR Madhvapathy*, M Amani*, D Kiriya, M Hettick, M Tosun, ... Advanced Materials 28 (21), 4053-4058, 2016 | 420 | 2016 |
| A comparative study of different physics-based NBTI models S Mahapatra, N Goel, S Desai, S Gupta, B Jose, S Mukhopadhyay, ... IEEE transactions on electron devices 60 (3), 901-916, 2013 | 330 | 2013 |
| Large-area and bright pulsed electroluminescence in monolayer semiconductors DH Lien, M Amani, SB Desai, GH Ahn, K Han, JH He, JW Ager III, MC Wu, ... Nature communications 9 (1), 1229, 2018 | 177 | 2018 |
| Monolithic 3D CMOS using layered semiconductors AB Sachid, M Tosun, SB Desai, CY Hsu, DH Lien, SR Madhvapathy, ... Adv. Mater 28 (13), 2547-2554, 2016 | 141 | 2016 |
| Mos2 heterojunctions by thickness modulation M Tosun*, D Fu*, SB Desai*, C Ko, JS Kang, DH Lien, M Najmzadeh, ... Scientific reports 5, 10990, 2015 | 113 | 2015 |
| Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density K Chen, D Kiriya, M Hettick, M Tosun, TJ Ha, SR Madhvapathy, S Desai, ... Apl Materials 2 (9), 2014 | 98 | 2014 |
| Direct growth of single-crystalline III–V semiconductors on amorphous substrates K Chen, R Kapadia, A Harker, S Desai, J Seuk Kang, S Chuang, M Tosun, ... Nature communications 7 (1), 10502, 2016 | 68 | 2016 |
| A comprehensive AC/DC NBTI model: Stress, recovery, frequency, duty cycle and process dependence S Desai, S Mukhopadhyay, N Goel, N Nanaware, B Jose, K Joshi, ... 2013 IEEE international reliability physics symposium (IRPS), XT. 2.1-XT. 2.11, 2013 | 58 | 2013 |
| Highly sensitive bulk silicon chemical sensors with sub-5 nm thin charge inversion layers HM Fahad, N Gupta, R Han, SB Desai, A Javey ACS nano 12 (3), 2948-2954, 2018 | 44 | 2018 |
| Spatially Precise Transfer of Patterned Monolayer WS2 and MoS2 with Features Larger than 104 μm2 Directly from Multilayer Sources HM Gramling, CM Towle, SB Desai, H Sun, EC Lewis, VD Nguyen, ... ACS Applied Electronic Materials 1 (3), 407-416, 2019 | 31 | 2019 |
| ACS Nano 8, 6259 (2014) T Roy, M Tosun, JS Kang, AB Sachid, SB Desai, M Hettick, CC Hu, ... | 28 | |
| Ultrafast Spontaneous Emission from a Slot-Antenna Coupled WSe2 Monolayer MS Eggleston, SB Desai, K Messer, SA Fortuna, S Madhvapathy, J Xiao, ... ACS Photonics 5 (7), 2701-2705, 2018 | 23 | 2018 |
| 2D layered materials: from materials properties to device applications P Zhao, S Desai, M Tosun, T Roy, H Fang, A Sachid, M Amani, C Hu, ... 2015 IEEE International Electron Devices Meeting (IEDM), 27.3. 1-27.3. 4, 2015 | 22 | 2015 |
| Bright electroluminescence in ambient conditions from WSe2 pn diodes using pulsed injection K Han, GH Ahn, J Cho, DH Lien, M Amani, SB Desai, G Zhang, H Kim, ... Applied Physics Letters 115 (1), 2019 | 16 | 2019 |
| High-gain monolithic 3D CMOS inverter using layered semiconductors AB Sachid, SB Desai, A Javey, C Hu Applied Physics Letters 111 (22), 2017 | 12 | 2017 |
| Gate quantum capacitance effects in nanoscale transistors SB Desai, HM Fahad, T Lundberg, G Pitner, H Kim, D Chrzan, HSP Wong, ... Nano letters 19 (10), 7130-7137, 2019 | 7 | 2019 |
