Chong Bi
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Reversible control of Co magnetism by voltage-induced oxidation
C Bi, Y Liu, T Newhouse-Illige, M Xu, M Rosales, JW Freeland, O Mryasov, ...
Physical review letters 113 (26), 267202, 2014
Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology
H Sun, Q Liu, C Li, S Long, H Lv, C Bi, Z Huo, L Li, M Liu
Advanced Functional Materials 24 (36), 5679-5686, 2014
Memory materials and devices: From concept to application
Z Zhang, Z Wang, T Shi, C Bi, F Rao, Y Cai, Q Liu, H Wu, P Zhou
InfoMat 2 (2), 261-290, 2020
Two-terminal spin–orbit torque magnetoresistive random access memory
N Sato, F Xue, RM White, C Bi, SX Wang
Nature Electronics 1 (9), 508-511, 2018
Thermoelectric Seebeck effect in oxide-based resistive switching memory
M Wang, C Bi, L Li, S Long, Q Liu, H Lv, N Lu, P Sun, M Liu
Nature communications 5 (1), 4598, 2014
Anomalous spin-orbit torque switching in synthetic antiferromagnets
C Bi, H Almasi, K Price, T Newhouse-Illige, M Xu, SR Allen, X Fan, ...
Physical Review B 95 (10), 104434, 2017
Magnetization switching using topological surface states
P Li, J Kally, SSL Zhang, T Pillsbury, J Ding, G Csaba, J Ding, JS Jiang, ...
Science advances 5 (8), eaaw3415, 2019
Voltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctions
T Newhouse-Illige, Y Liu, M Xu, D Reifsnyder Hickey, A Kundu, H Almasi, ...
Nature communications 8 (1), 15232, 2017
Structural and room-temperature ferromagnetic properties of Fe-doped CuO nanocrystals
Y Li, M Xu, L Pan, Y Zhang, Z Guo, C Bi
Journal of Applied Physics 107 (11), 2010
Structural and multiferroic properties of Fe-doped Ba0. 5Sr0. 5TiO3 solids
Z Guo, L Pan, C Bi, H Qiu, X Zhao, L Yang, MY Rafique
Journal of magnetism and magnetic materials 325, 24-28, 2013
Topological Hall effect in a topological insulator interfaced with a magnetic insulator
P Li, J Ding, SSL Zhang, J Kally, T Pillsbury, OG Heinonen, G Rimal, C Bi, ...
Nano letters 21 (1), 84-90, 2020
Synthesis and characterization of Co-doped wurtzite ZnS nanocrystals
C Bi, L Pan, M Xu, J Yin, L Qin, J Liu, H Zhu, JQ Xiao
Materials Chemistry and Physics 116 (2-3), 363-367, 2009
Perpendicular magnetic tunnel junction with W seed and capping layers
H Almasi, CL Sun, X Li, T Newhouse-Illige, C Bi, KC Price, S Nahar, ...
Journal of Applied Physics 121 (15), 2017
Observation of anti-damping spin–orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3
M Dc, DF Shao, VDH Hou, A Vailionis, P Quarterman, A Habiboglu, ...
Nature Materials 22 (5), 591-598, 2023
Thermally assisted magnetic switching of a single perpendicularly magnetized layer induced by an in-plane current
C Bi, L Huang, S Long, Q Liu, Z Yao, L Li, Z Huo, L Pan, M Liu
Applied Physics Letters 105 (2), 2014
Large and robust charge-to-spin conversion in sputtered conductive WTex with disorder
X Li, P Li, VDH Hou, DC Mahendra, CH Nien, F Xue, D Yi, C Bi, CM Lee, ...
Matter 4 (5), 1639-1653, 2021
Electrical control of metallic heavy-metal–ferromagnet interfacial states
C Bi, C Sun, M Xu, T Newhouse-Illige, PM Voyles, W Wang
Physical Review Applied 8 (3), 034003, 2017
Facile fabrication of wurtzite ZnS hollow nanospheres using polystyrene spheres as templates
C Bi, L Pan, Z Guo, Y Zhao, M Huang, X Ju, JQ Xiao
Materials Letters 64 (15), 1681-1683, 2010
Predictive materials design of magnetic random-access memory based on nanoscale atomic structure and element distribution
X Li, T Sasaki, C Grezes, D Wu, K Wong, C Bi, PV Ong, F Ebrahimi, G Yu, ...
Nano letters 19 (12), 8621-8629, 2019
Electric field modified Arrhenius description of charge transport in amorphous oxide semiconductor thin film transistors
W Wang, G Xu, MDH Chowdhury, H Wang, JK Um, Z Ji, N Gao, Z Zong, ...
Physical Review B 98 (24), 245308, 2018
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