| Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology H Sun, Q Liu, C Li, S Long, H Lv, C Bi, Z Huo, L Li, M Liu Advanced Functional Materials 24 (36), 5679-5686, 2014 | 360 | 2014 |
| Reversible control of Co magnetism by voltage-induced oxidation C Bi, Y Liu, T Newhouse-Illige, M Xu, M Rosales, JW Freeland, O Mryasov, ... Physical review letters 113 (26), 267202, 2014 | 346 | 2014 |
| Two-terminal spin–orbit torque magnetoresistive random access memory N Sato, F Xue, RM White, C Bi, SX Wang Nature Electronics 1 (9), 508-511, 2018 | 189 | 2018 |
| Thermoelectric Seebeck effect in oxide-based resistive switching memory M Wang, C Bi, L Li, S Long, Q Liu, H Lv, N Lu, P Sun, M Liu Nature communications 5 (1), 4598, 2014 | 116 | 2014 |
| Magnetization switching using topological surface states P Li, J Kally, SSL Zhang, T Pillsbury, J Ding, G Csaba, J Ding, JS Jiang, ... Science advances 5 (8), eaaw3415, 2019 | 90 | 2019 |
| Anomalous spin-orbit torque switching in synthetic antiferromagnets C Bi, H Almasi, K Price, T Newhouse-Illige, M Xu, SR Allen, X Fan, ... Physical Review B 95 (10), 104434, 2017 | 90 | 2017 |
| Voltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctions T Newhouse-Illige, Y Liu, M Xu, D Reifsnyder Hickey, A Kundu, H Almasi, ... Nature communications 8 (1), 15232, 2017 | 74 | 2017 |
| Observation of anti-damping spin–orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3 M Dc, DF Shao, VDH Hou, A Vailionis, P Quarterman, A Habiboglu, ... Nature Materials 22 (5), 591-598, 2023 | 63 | 2023 |
| Structural and room-temperature ferromagnetic properties of Fe-doped CuO nanocrystals Y Li, M Xu, L Pan, Y Zhang, Z Guo, C Bi Journal of Applied Physics 107 (11), 2010 | 61 | 2010 |
| Structural and multiferroic properties of Fe-doped Ba0. 5Sr0. 5TiO3 solids Z Guo, L Pan, C Bi, H Qiu, X Zhao, L Yang, MY Rafique Journal of magnetism and magnetic materials 325, 24-28, 2013 | 56 | 2013 |
| Topological Hall effect in a topological insulator interfaced with a magnetic insulator P Li, J Ding, SSL Zhang, J Kally, T Pillsbury, OG Heinonen, G Rimal, C Bi, ... Nano letters 21 (1), 84-90, 2020 | 48 | 2020 |
| Perpendicular magnetic tunnel junction with W seed and capping layers H Almasi, CL Sun, X Li, T Newhouse-Illige, C Bi, KC Price, S Nahar, ... Journal of Applied Physics 121 (15), 2017 | 42 | 2017 |
| Synthesis and characterization of Co-doped wurtzite ZnS nanocrystals C Bi, L Pan, M Xu, J Yin, L Qin, J Liu, H Zhu, JQ Xiao Materials Chemistry and Physics 116 (2-3), 363-367, 2009 | 41 | 2009 |
| Large and robust charge-to-spin conversion in sputtered conductive WTex with disorder X Li, P Li, VDH Hou, DC Mahendra, CH Nien, F Xue, D Yi, C Bi, CM Lee, ... Matter 4 (5), 1639-1653, 2021 | 35 | 2021 |
| Predictive materials design of magnetic random-access memory based on nanoscale atomic structure and element distribution X Li, T Sasaki, C Grezes, D Wu, K Wong, C Bi, PV Ong, F Ebrahimi, G Yu, ... Nano letters 19 (12), 8621-8629, 2019 | 31 | 2019 |
| Thermally assisted magnetic switching of a single perpendicularly magnetized layer induced by an in-plane current C Bi, L Huang, S Long, Q Liu, Z Yao, L Li, Z Huo, L Pan, M Liu Applied Physics Letters 105 (2), 2014 | 30 | 2014 |
| Electrical control of metallic heavy-metal–ferromagnet interfacial states C Bi, C Sun, M Xu, T Newhouse-Illige, PM Voyles, W Wang Physical Review Applied 8 (3), 034003, 2017 | 29 | 2017 |
| Electric field modified Arrhenius description of charge transport in amorphous oxide semiconductor thin film transistors W Wang, G Xu, MDH Chowdhury, H Wang, JK Um, Z Ji, N Gao, Z Zong, ... Physical Review B 98 (24), 245308, 2018 | 28 | 2018 |
| Facile fabrication of wurtzite ZnS hollow nanospheres using polystyrene spheres as templates C Bi, L Pan, Z Guo, Y Zhao, M Huang, X Ju, JQ Xiao Materials Letters 64 (15), 1681-1683, 2010 | 27 | 2010 |
| Large voltage control of magnetic anisotropy in CoFeB/MgO/OX structures at room temperature F Xue, N Sato, C Bi, J Hu, J He, SX Wang APL Materials 7 (10), 2019 | 23 | 2019 |
Weigang WangUniversity of ArizonaVerified email at physics.arizona.edu
