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Muhammed Ahosan Ul Karim
Muhammed Ahosan Ul Karim
Electrical Engineering and Computer Sciences, University of California, Berkeley
Verified email at eecs.berkeley.edu
Title
Cited by
Cited by
Year
BSIM6: Analog and RF compact model for bulk MOSFET
YS Chauhan, S Venugopalan, MA Chalkiadaki, M Ahosan Ul Karim, ...
Electron Devices, IEEE Transactions on 61 (2), 234-244, 2014
1092014
BSIM-IMG: A compact model for ultrathin-body SOI MOSFETs with back-gate control
S Khandelwal, YS Chauhan, DD Lu, S Venugopalan, M Ahosan Ul Karim, ...
Electron Devices, IEEE Transactions on 59 (8), 2019-2026, 2012
992012
BSIM—Industry standard compact MOSFET models
YS Chauhan, S Venugopalan, MA Karim, S Khandelwal, N Paydavosi, ...
2012 Proceedings of the European Solid-State Device Research Conference …, 2012
762012
Gravure-printed sol-gels on flexible glass: A scalable route to additively patterned transparent conductors
W Scheideler, J Jang, M Ahosan UI Karim, R Kitsomboonloha, ...
ACS Applied Materials & Interfaces, 2015
462015
Extraction of isothermal condition and thermal network in UTBB SOI MOSFETs
M Ahosan Ul Karim, YS Chauhan, S Venugopalan, AB Sachid, DD Lu, ...
Electron Device Letters, IEEE 33 (9), 1306-1308, 2012
46*2012
High-Performance Inkjet-Printed Four-Terminal Microelectromechanical Relays and Inverters
S Chung, M Ahosan Ul Karim, HJ Kwon, V Subramanian
Nano letters 15 (5), 3261-3266, 2015
272015
Phenomenological compact model for QM charge centroid in multigate FETs
S Venugopalan, M Ahosan Ul Karim, S Salahuddin, AM Niknejad, CC Hu
Electron Devices, IEEE Transactions on 60 (4), 1480-1484, 2013
232013
BSIM6: Symmetric bulk MOSFET model
YS Chauhan, M Ahosan Ul Karim, S Venugopalan, S Khandelwal, ...
Workshop on Compact Modeling, Santa Clara, USA, 2012
202012
A physically based accurate model for quantum mechanical correction to the surface potential of nanoscale MOSFETs
M Ahosan Ul Karim, A Haque
Electron Devices, IEEE Transactions on 57 (2), 496-502, 2010
19*2010
Exploitation of the coffee-ring effect to realize mechanically enhanced inkjet-printed microelectromechanical relays with U-bar-shaped cantilevers
S Chung, M Ahosan Ul Karim, M Spencer, HJ Kwon, CP Grigoropoulos, ...
Applied Physics Letters 105 (26), 261901, 2014
182014
Fully Inkjet‐Printed Stress‐Tolerant Microelectromechanical Reed Relays for Large‐Area Electronics
M Ahosan Ul Karim, S Chung, E Alon, V Subramanian
Advanced Electronic Materials 2 (5), 1500482, 2016
122016
Drain Induced Barrier Lowering (DIBL) Effect on the Intrinsic Capacitances of Nano-Scale MOSFETs
M Ahosan Ul Karim, S Venugopalan, YS Chauhan, D Lu, A Niknejad, ...
proceeding of NSTI-Nanotech, 814-817, 2011
12*2011
Compact models for real device effects in FinFETs
S Venugopalan, M Ahosan Ul Karim, AM Niknejad, C Hu, DD Lu
The international conference on simulation of semiconductor processes and …, 2012
112012
Evaluation of the BSIM6 compact MOSFET model's scalability in 40nm CMOS technology
MA Chalkiadaki, A Mangla, CC Enz, YS Chauhan, M Ahosan Ul Karim, ...
Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the …, 2012
102012
Compact models for sub-22 nm MOSFETs
YS Chauhan, DD Lu, S Venugopalan, M Ahosan Ul Karim, A Niknejad, ...
Proc. Workshop Compact Model, 2011
102011
An Energy-Efficient and High Throughput in-Memory Computing Bit-Cell With Excellent Robustness Under Process Variations for Binary Neural Network
G Saha, Z Jiang, S Parihar, C Xi, J Higman, M Ahosan Ul Karim
IEEE Access 8, 91405-91414, 2020
92020
A high-speed inkjet-printed microelectromechanical relay with a mechanically enhanced double-clamped channel-beam
S Chung, M Ahosan Ul Karim, HJ Kwon, W Scheideler, V Subramanian
Journal of Microelectromechanical Systems 26 (1), 95-101, 2016
92016
BSIM6. 0 MOSFET compact model
YS Chauhan, MA Karim, S Venugopalan, H Agarwal, P Thakur, ...
Technical Manual, May, 2013
92013
Modeling intrinsic and extrinsic asymmetry of 3D cylindrical gate/gate-all-around FETs for circuit simulations
S Venugopalan, YS Chauhan, DD Lu, M Ahosan Ul Karim, AM Niknejad, ...
11th IEEE Non-Volatile Memory Technology Symposium (NVMTS), 1-4, 2011
72011
Three-port memory cell and array for in-memory computing
Z Jiang, MAUL Karim, X Cao, V Joshi, JM Higman
US Patent 10,964,362, 2021
42021
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