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Navid Paydavosi
Navid Paydavosi
Device Engineer, Intel
Verified email at intel.com
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Cited by
Cited by
Year
FinFET modeling for IC simulation and design: using the BSIM-CMG standard
YS Chauhan, DD Lu, S Venugopalan, S Khandelwal, JP Duarte, ...
Academic Press, 2015
1862015
BSIM—SPICE models enable FinFET and UTB IC designs
N Paydavosi, S Venugopalan, YS Chauhan, JP Duarte, S Jandhyala, ...
IEEE Access 1, 201-215, 2013
1262013
BSIM6: Analog and RF compact model for bulk MOSFET
YS Chauhan, S Venugopalan, MA Chalkiadaki, MAU Karim, H Agarwal, ...
IEEE Transactions on Electron Devices 61 (2), 234-244, 2013
1092013
BSIM—Industry standard compact MOSFET models
YS Chauhan, S Venugopalan, MA Karim, S Khandelwal, N Paydavosi, ...
2012 Proceedings of the European Solid-State Device Research Conference …, 2012
762012
Unified FinFET compact model: Modelling trapezoidal triple-gate FinFETs
JP Duarte, N Paydavosi, S Venugopalan, A Sachid, C Hu
2013 International Conference on Simulation of Semiconductor Processes and …, 2013
372013
Bsim4v4. 8.0 mosfet model
N Paydavosi, TH Morshed, DD Lu, WM Yang, MV Dunga, XJ Xi, J He, ...
University of California, Berkeley (CA), 2013
342013
BSIM compact MOSFET models for SPICE simulation
YS Chauhan, S Venugopalan, N Paydavosi, P Kushwaha, S Jandhyala, ...
Proceedings of the 20th International Conference Mixed Design of Integrated …, 2013
332013
Modeling the impact of substrate depletion in FDSOI MOSFETs
P Kushwaha, N Paydavosi, S Khandelwal, C Yadav, H Agarwal, ...
Solid-State Electronics 104, 6-11, 2015
312015
Recent enhancements in BSIM6 bulk MOSFET model
H Agarwal, S Venugopalan, MA Chalkiadaki, N Paydavosi, JP Duarte, ...
2013 International Conference on Simulation of Semiconductor Processes and …, 2013
282013
RF linearity potential of carbon-nanotube transistors versus MOSFETs
AU Alam, CMS Rogers, N Paydavosi, KD Holland, S Ahmed, ...
IEEE transactions on nanotechnology 12 (3), 340-351, 2013
232013
Impact of Contact Resistance on the and of Graphene Versus Transistors
KD Holland, AU Alam, N Paydavosi, M Wong, CM Rogers, S Rizwan, ...
IEEE Transactions on Nanotechnology 16 (1), 94-106, 2016
222016
BSIM-CMG 110.0. 0: Multi-gate MOSFET compact model: technical manual
S Khandelwal, JP Duarte, AS Medury, S Venugopalan, N Paydavosi, ...
BSIM Group UC Berkeley, 2015
202015
BSIM6: Symmetric bulk MOSFET model
YS Chauhan, MA Karim, S Venugopalan, S Khandelwal, P Thakur, ...
Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and …, 2012
202012
RF performance potential of array-based carbon-nanotube transistors—part II: extrinsic results
N Paydavosi, JP Rebstock, KD Holland, S Ahmed, AU Alam, ...
IEEE transactions on electron devices 58 (7), 1941-1951, 2011
172011
Understanding the frequency-and time-dependent behavior of ballistic carbon-nanotube transistors
N Paydavosi, KD Holland, MM Zargham, M Vaidyanathan
IEEE transactions on nanotechnology 8 (2), 234-244, 2008
172008
BSIM-CMG 108.0. 0: Multi-gate MOSFET compact model: technical manual
S Khandelwal, JP Duarte, S Venugopalan, N Paydavosi, DD Lu, CH Lin, ...
BSIM Group UC Berkeley, 2014
16*2014
RF performance limits and operating physics arising from the lack of a bandgap in graphene transistors
KD Holland, N Paydavosi, N Neophytou, D Kienle, M Vaidyanathan
IEEE transactions on nanotechnology 12 (4), 566-577, 2013
162013
Bsim-cmg 107.0. 0: Multi-gate mosfet compact model (technical manual)
V Sriramkumar, N Paydavosi, J Duarte, D Lu, CH Lin, M Dunga, S Yao, ...
Dept. of Electrical Engineering and Computer Sciences, Univ. of California …, 2013
162013
RF performance potential of array-based carbon-nanotube transistors—Part I: Intrinsic results
N Paydavosi, AU Alam, S Ahmed, KD Holland, JP Rebstock, ...
IEEE transactions on electron devices 58 (7), 1928-1940, 2011
162011
Self-consistent simulation of array-based CNFETs: Impact of tube pitch on RF performance
K Holland, N Paydavosi, M Vaidyanathan
2010 14th International Workshop on Computational Electronics, 1-4, 2010
102010
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