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Zhenni Wan
Zhenni Wan
Verified email at uw.edu
Title
Cited by
Cited by
Year
Negative differential resistance in boron nitride graphene heterostructures: Physical mechanisms and size scaling analysis
Y Zhao, Z Wan, X Xu, SR Patil, U Hetmaniuk, MP Anantram
Scientific reports 5 (1), 10712, 2015
502015
A forming-free bipolar resistive switching behavior based on ITO/V2O5/ITO structure
Z Wan, RB Darling, A Majumdar, MP Anantram
Applied Physics Letters 111 (4), 2017
312017
Negative differential resistance in graphene boron nitride heterostructure controlled by twist and phonon-scattering
Y Zhao, Z Wan, U Hetmanuik, MP Anantram
IEEE Electron Device Letters 37 (9), 1242-1245, 2016
142016
Programmable diode/resistor-like behavior of nanostructured vanadium pentoxide xerogel thin film
Z Wan, RB Darling, MP Anantram
Physical Chemistry Chemical Physics 17 (45), 30248-30254, 2015
142015
Resistive memory cell
Y Cai, Z Wan, R Huang
US Patent 8,995,165, 2015
112015
Bipolar Resistive Switching Characteristics of Thermally Evaporated V2O5 Thin Films
Z Wan, H Mohammad, Y Zhao, RB Darling, MP Anantram
IEEE Electron Device Letters 39 (9), 1290-1293, 2018
72018
Engineering of the resistive switching properties in V2O5 thin film by atomic structural transition: Experiment and theory
Z Wan, H Mohammad, Y Zhao, C Yu, RB Darling, MP Anantram
Journal of Applied Physics 124 (10), 2018
52018
Resistive Switching Effects of Vanadium Pentoxide Thin Film
Z Wan
22018
A modeling study of mechanisms for NDR in graphene-BN-graphene heterostructures
Y Zhao, Z Wan, X Xu, SR Patil, U Hetmaniuk, MP Anantram
2015 IEEE Nanotechnology Materials and Devices Conference (NMDC), 1-2, 2015
22015
Vanadium Oxide Based RRAM Device
Z Wan, RB Darling, MP Anantram
MRS Advances 2, 3019-3024, 2017
2017
A Novel Floating Gate Structure for High-Reliability and High-Speed Flash Application
S Mei, Y Cai, Z Wan, R Huang
ECS Transactions 44 (1), 115, 2012
2012
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Articles 1–11