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Abdelmalek BENKOUIDER
Abdelmalek BENKOUIDER
X-FAB France
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Title
Cited by
Cited by
Year
Wafer Scale Formation of Monocrystalline Silicon-Based Mie Resonators via Silicon-on-Insulator Dewetting
M Abbarchi, M Naffouti, B Vial, A Benkouider, L Lermusiaux, L Favre, ...
ACS Nano, 2014
1072014
Complex dewetting scenarios of ultrathin silicon films for large-scale nanoarchitectures
M Naffouti, R Backofen, M Salvalaglio, T Bottein, M Lodari, A Voigt, ...
Science advances 3 (11), eaao1472, 2017
1032017
Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO 2 dewetting
M Naffouti, T David, A Benkouider, L Favre, A Ronda, I Berbezier, ...
Nanoscale 8 (5), 2844-2849, 2016
44*2016
Kinetics and energetics of Ge condensation in SiGe oxidation
T David, A Benkouider, JN Aqua, M Cabie, L Favre, T Neisius, M Abbarchi, ...
The Journal of Physical Chemistry C 119 (43), 24606-24613, 2015
382015
Templated solid‐state dewetting of thin silicon films
M Naffouti, T David, A Benkouider, L Favre, A Delobbe, A Ronda, ...
Small 12 (44), 6115-6123, 2016
352016
Fabrication of core–shell nanostructures via silicon on insulator dewetting and germanium condensation: Towards a strain tuning method for SiGe-based heterostructures in a …
M Naffouti, T David, A Benkouider, L Favre, M Cabie, A Ronda, ...
Nanotechnology 27 (30), 305602, 2016
212016
Ordered arrays of Au catalysts by FIB assisted heterogeneous dewetting
A Benkouider, A Ronda, T David, L Favre, M Abbarchi, M Naffouti, ...
Nanotechnology 26 (50), 505602, 2015
202015
Al concentration effect on ZnO based thin films: for photovoltaic applications
FZ Ghomrani, A Aissat, H Arbouz, A Benkouider
Energy Procedia 74, 491-498, 2015
192015
Configurable compliant substrates for SiGe nanomembrane fabrication
JN Aqua, L Favre, A Ronda, A Benkouider, I Berbezier
Crystal Growth & Design 15 (7), 3399-3406, 2015
192015
Solid-state dewetting of single-crystal silicon on insulator: effect of annealing temperature and patch size
M Abbarchi, M Naffouti, M Lodari, M Salvalaglio, R Backofen, T Bottein, ...
Microelectronic Engineering 190, 1-6, 2018
142018
Ultimate nanopatterning of Si substrate using filtered liquid metal alloy ion source-focused ion beam
A Benkouider, I Berbezier, A Ronda, L Favre, ER Gomes, IC Marcus, ...
Thin Solid Films 543, 69-73, 2013
122013
Modeling and simulation of InAs/GaAs quantum dots for solar cell applications
A Benahmed, A Aissat, A Benkouider, JP Vilcot
Optik 127 (7), 3531-3534, 2016
112016
Remarkable strength characteristics of defect-free SiGe/Si heterostructures obtained by Ge condensation
T David, K Liu, S Fernandez, MI Richard, A Ronda, L Favre, M Abbarchi, ...
The Journal of Physical Chemistry C 120 (36), 20333-20340, 2016
102016
Selective growth and ordering of SiGe nanowires for band gap engineering
A Benkouider, A Ronda, A Gouyé, C Herrier, L Favre, DJ Lockwood, ...
Nanotechnology 25 (33), 335303, 2014
92014
The doping effect on the properties of zinc oxide (ZnO) thin layers for photovoltaic applications
A Aissata, MA Ghomrani, W Bellil, A Benkouider, JP Vilcot
International Journal of Hydrogen Energy, 2015
82015
Immunogenicity and Reactogenicity following Primary Immunisation with a Combined DTaP-HBV Vaccine and a Haemophilus influenzae Type B Vaccine …
G Gabutti, G Bona, P Dentico, F Bamfi, K Hardt, S Majori, P Crovari, ...
Clinical drug investigation 25, 315-323, 2005
82005
Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si (111)
DJ Lockwood, NL Rowell, A Benkouider, A Ronda, L Favre, I Berbezier
Beilstein Journal of Nanotechnology 5 (1), 2498-2504, 2014
72014
Guaianolide and pseudoguaianolide from Pulicaria laciniata
MC Aberkane, A Dibi, H Haba, M Benkhaled, A Benkouider, M Mokhtari, ...
Asian Journal of Chemistry 19 (6), 4954, 2007
72007
ACS Nano 8, 11181 (2014)
M Abbarchi, M Naffouti, B Vial, A Benkouider, L Lermusiaux, L Favre, ...
5
Deterministic three-dimensional self-assembly of si through a rimless and topology-preserving dewetting regime
M Naffouti, M Salvalaglio, T David, JB Claude, M Bollani, A Voigt, ...
Physical Review Materials 3 (10), 103402, 2019
42019
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