| Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks X Meng, YC Byun, HS Kim, JS Lee, AT Lucero, L Cheng, J Kim Materials 9 (12), 1007, 2016 | 135 | 2016 |
| Low temperature synthesis of graphite on Ni films using inductively coupled plasma enhanced CVD L Cheng, K Yun, A Lucero, J Huang, X Meng, G Lian, HS Nam, ... Journal of Materials Chemistry C 3 (20), 5192-5198, 2015 | 48 | 2015 |
| Hierarchical Porous Carbon Arising from Metal–Organic Framework-Encapsulated Bacteria and Its Energy Storage Potential S Li, Xiaoshuang, ZZ Chen, FC Herbert, R Jayawickramage, ... ACS Appl. Mater. Interfaces 12 (10), 11884-11889, 2020 | 39 | 2020 |
| Hollow Cathode Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using Pentachlorodisilane X Meng, HS Kim, AT Lucero, SM Hwang, JS Lee, YC Byun, J Kim, ... ACS Appl. Mater. Interfaces 10 (16), 14116−14123, 2018 | 33 | 2018 |
| Sensitivity gains in chemosensing by optical and structural modulation of ordered assembly arrays of ZnO nanorods D Zhu, Q He, Q Chen, Y Fu, C He, L Shi, X Meng, C Deng, H Cao, ... ACS nano 5 (6), 4293-4299, 2011 | 32 | 2011 |
| Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper HS Kim, X Meng, SJ Kim, AT Lucero, L Cheng, YC Byun, JS Lee, ... ACS applied materials & interfaces 10 (51), 44825–44833, 2018 | 31 | 2018 |
| Robust SiNx/GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD X Meng, J Lee, AV Ravichandran, YC Byun, JG Lee, A Lucero, SJ Kim, ... IEEE Electron Device Letters 39 (8), 1195-1198, 2018 | 14 | 2018 |
| Low temperature (100° C) atomic layer deposited-ZrO2 for recessed gate GaN HEMTs on Si YC Byun, JG Lee, X Meng, JS Lee, AT Lucero, SJ Kim, CD Young, MJ Kim, ... Applied Physics Letters 111 (8), 2017 | 14 | 2017 |
| High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor HS Kim, SM Hwang, X Meng, YC Byun, YC Jung, AV Ravichandran, ... Journal of Materials Chemistry C 8 (37), 13033-13039, 2020 | 10 | 2020 |
| A novel chemosensor-bipyridyl end capped hyperbranched conjugated polymer X Meng, QG He, HM Cao, JG Cheng Chinese Chemical Letters 22 (6), 725-728, 2011 | 9 | 2011 |
| Hollow cathode plasma (HCP) enhanced atomic layer deposition of silicon nitride (SiNx) thin films using pentachlorodisilane (PCDS) SM Hwang, ALN Kondusamy, Z Qin, HS Kim, X Meng, J Kim, BK Hwang, ... ECS Transactions 89 (3), 63, 2019 | 7 | 2019 |
| Demonstration of High-Growth-Rate Epitaxially Grown Si Channel on 3D NAND Test Vehicle with Memory Functionality HL Tang, I Jung, FCC Chin, L Thomas, X Meng, A Kumar, J Ahn, Z Zhu, ... 2024 IEEE International Memory Workshop (IMW), 1-4, 2024 | | 2024 |
| From Biomimetic Mineralization to Carbonization: Fabricating Heterostructured Porous Carbon Materials with MOF Encapsulated Bacteria S Li, X Zhou, Z Chen, R Jayawickramage, SB Alahakoon, X Meng, ... | | 2019 |
| Low Temperature Thermal ALD of Silicon Nitride Utilizing a Novel High Purity Hydrazine Source D Alvarez Jr, K Andachi, AT Lucero, A Kondusamy, SM Hwang, X Meng, ... Electrochemical Society Meeting Abstracts aimes2018, 993-993, 2018 | | 2018 |
| High Mobility III-V Semiconductor Devices with Gate Dielectrics and Passivation Layers Grown by Atomic Layer Deposition X Meng The University of Texas at Dallas, 2018 | | 2018 |
Jiyoung KimProfessor, Department of Materials Science and Engineering, University of Texas at DallasVerified email at utdallas.edu
