| Multiscale co-design analysis of energy, latency, area, and accuracy of a ReRAM analog neural training accelerator MJ Marinella, S Agarwal, A Hsia, I Richter, R Jacobs-Gedrim, J Niroula, ... IEEE Journal on Emerging and Selected Topics in Circuits and Systems 8 (1 …, 2018 | 175 | 2018 |
| Using floating-gate memory to train ideal accuracy neural networks S Agarwal, D Garland, J Niroula, RB Jacobs-Gedrim, A Hsia, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 5 …, 2019 | 42 | 2019 |
| Impact of linearity and write noise of analog resistive memory devices in a neural algorithm accelerator RB Jacobs-Gedrim, S Agarwal, KE Knisely, JE Stevens, ... 2017 IEEE International Conference on Rebooting Computing (ICRC), 1-10, 2017 | 29 | 2017 |
| Field-induced acceptor ionization in enhancement-mode GaN p-MOSFETs N Chowdhury, Q Xie, J Niroula, NS Rajput, K Cheng, HW Then, ... 2020 IEEE International Electron Devices Meeting (IEDM), 5.5. 1-5.5. 4, 2020 | 27 | 2020 |
| First demonstration of GaN vertical power FinFETs on engineered substrate A Zubair, J Perozek, J Niroula, O Aktas, V Odnoblyudov, T Palacios 2020 Device Research Conference (DRC), 1-2, 2020 | 16 | 2020 |
| GaN ring oscillators operational at 500° C based on a GaN-on-Si platform M Yuan, Q Xie, K Fu, T Hossain, J Niroula, JA Greer, N Chowdhury, ... IEEE Electron Device Letters 43 (11), 1842-1845, 2022 | 15 | 2022 |
| GaN memory operational at 300 C M Yuan, Q Xie, J Niroula, N Chowdhury, T Palacios IEEE Electron Device Letters 43 (12), 2053-2056, 2022 | 12 | 2022 |
| Analog high resistance bilayer RRAM device for hardware acceleration of neuromorphic computation RB Jacobs-Gedrim, S Agarwal, RS Goeke, C Smith, PS Finnegan, ... Journal of Applied Physics 124 (20), 2018 | 12 | 2018 |
| High temperature robustness of enhancement-mode p-GaN-gated AlGaN/GaN HEMT technology M Yuan, Q Xie, J Niroula, MF Isamotu, NS Rajput, N Chowdhury, ... 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA …, 2022 | 11 | 2022 |
| Enhancement-mode GaN transistor technology for harsh environment operation M Yuan, J Niroula, Q Xie, NS Rajput, K Fu, S Luo, SK Das, AJB Iqbal, ... IEEE Electron Device Letters, 2023 | 10 | 2023 |
| GaN 2.0: Power FinFETs, complementary gate drivers and low-cost vertical devices T Palacios, A Zubair, J Niroula, J Perozek, N Chowdhury, D Pei, M Dipsey, ... 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 9 | 2021 |
| Highly-scaled self-aligned GaN complementary technology on a GaN-on-Si platform Q Xie, M Yuan, J Niroula, JA Greer, NS Rajput, N Chowdhury, T Palacios 2022 International Electron Devices Meeting (IEDM), 35.3. 1-35.3. 4, 2022 | 8 | 2022 |
| Highly scaled GaN complementary technology on a silicon substrate Q Xie, M Yuan, J Niroula, B Sikder, JA Greer, NS Rajput, N Chowdhury, ... IEEE Transactions on Electron Devices 70 (4), 2121-2128, 2023 | 7 | 2023 |
| Piecewise empirical model (PEM) of resistive memory for pulsed analog and neuromorphic applications J Niroula, S Agarwal, R Jacobs-Gedrim, RL Schiek, D Hughart, A Hsia, ... Journal of Computational Electronics 16, 1144-1153, 2017 | 6 | 2017 |
| Towards DTCO in high temperature GaN-on-Si technology: Arithmetic logic unit at 300 C and CAD framework up to 500 C Q Xie, M Yuan, J Niroula, B Sikder, S Luo, K Fu, NS Rajput, AB Pranta, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 4 | 2023 |
| First Demonstration of GaN RF HEMTs on Engineered Substrate P Yadav, Q Xie, J Niroula, GK Micale, H Pal, T Palacios 2023 Device Research Conference (DRC), 1-2, 2023 | 1 | 2023 |
| Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments Q Xie, J Niroula, NS Rajput, M Yuan, S Luo, K Fu, MF Isamotu, RH Palash, ... Applied Physics Letters 124 (17), 2024 | | 2024 |
| Materials and technology issues for the next generation of power electronic devices A Zubair, J Niroula, N Chowdhury, Y Zhang, J Lemettinen, T Palacios 2020 Device Research Conference (DRC), 1-2, 2020 | | 2020 |
| Toward an Analog Neural Accelerator with 10 fJ per Operation using Resistive Synaptic Devices. M Marinella, S Agarwal, RB Jacobs-Gedrim, J Niroula, RS Goeke, ... Sandia National Lab.(SNL-NM), Albuquerque, NM (United States); Sandia …, 2019 | | 2019 |
| Ionic floating-gate memory for neuromorphic computing. EJ Fuller, ST Keene, Z Wang, S Agarwal, RB Jacobs-Gedrim, J Niroula, ... Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2018 | | 2018 |
