| Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects K Hoo Teo, Y Zhang, N Chowdhury, S Rakheja, R Ma, Q Xie, E Yagyu, ... Journal of Applied Physics 130 (16), 2021 | 215 | 2021 |
| P-channel GaN transistor based on p-GaN/AlGaN/GaN on Si N Chowdhury, J Lemettinen, Q Xie, Y Zhang, NS Rajput, P Xiang, ... IEEE Electron Device Letters 40 (7), 1036-1039, 2019 | 126 | 2019 |
| Regrowth-free GaN-based complementary logic on a Si substrate N Chowdhury, Q Xie, M Yuan, K Cheng, HW Then, T Palacios IEEE Electron Device Letters 41 (6), 820-823, 2020 | 119 | 2020 |
| First demonstration of a self-aligned GaN p-FET N Chowdhury, Q Xie, M Yuan, NS Rajput, P Xiang, K Cheng, HW Then, ... 2019 IEEE International Electron Devices Meeting (IEDM), 4.6. 1-4.6. 4, 2019 | 52 | 2019 |
| Self-Aligned E-Mode GaN p-Channel FinFET With ION > 100 mA/mm and ION/IOFF > 10⁷ N Chowdhury, Q Xie, T Palacios IEEE Electron Device Letters 43 (3), 358-361, 2022 | 37 | 2022 |
| Field-induced acceptor ionization in enhancement-mode GaN p-MOSFETs N Chowdhury, Q Xie, J Niroula, NS Rajput, K Cheng, HW Then, ... 2020 IEEE International Electron Devices Meeting (IEDM), 5.5. 1-5.5. 4, 2020 | 36 | 2020 |
| Tungsten-Gated GaN/AlGaN p-FET With Imax > 120 mA/mm on GaN-on-Si N Chowdhury, Q Xie, T Palacios IEEE Electron Device Letters 43 (4), 545-548, 2022 | 33 | 2022 |
| GaN ring oscillators operational at 500° C based on a GaN-on-Si platform M Yuan, Q Xie, K Fu, T Hossain, J Niroula, JA Greer, N Chowdhury, ... IEEE Electron Device Letters 43 (11), 1842-1845, 2022 | 24 | 2022 |
| Effectiveness of oxide trench array as a passive temperature compensation structure in AlN-on-silicon micromechanical resonators Q Xie, N Wang, C Sun, AB Randles, P Singh, X Zhang, Y Gu Applied Physics Letters 110 (8), 083501, 2017 | 20 | 2017 |
| High temperature robustness of enhancement-mode p-GaN-gated AlGaN/GaN HEMT technology M Yuan, Q Xie, J Niroula, MF Isamotu, NS Rajput, N Chowdhury, ... 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA …, 2022 | 19 | 2022 |
| NbN-Gated GaN Transistor Technology for Applications in Quantum Computing Systems Q Xie, N Chowdhury, A Zubair, M Sánchez Lozano, J Lemettinen, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 18 | 2021 |
| 1 kV GaN-on-Si quasi-vertical Schottky rectifier Y Qin, M Xiao, R Zhang, Q Xie, T Palacios, B Wang, Y Ma, I Kravchenko, ... IEEE Electron Device Letters 44 (7), 1052-1055, 2023 | 17 | 2023 |
| Highly scaled GaN complementary technology on a silicon substrate Q Xie, M Yuan, J Niroula, B Sikder, JA Greer, NS Rajput, N Chowdhury, ... IEEE Transactions on Electron Devices 70 (4), 2121-2128, 2023 | 17 | 2023 |
| Enhancement-mode GaN transistor technology for harsh environment operation M Yuan, J Niroula, Q Xie, NS Rajput, K Fu, S Luo, SK Das, AJB Iqbal, ... IEEE Electron Device Letters 44 (7), 1068-1071, 2023 | 16 | 2023 |
| GaN memory operational at 300° C M Yuan, Q Xie, J Niroula, N Chowdhury, T Palacios IEEE Electron Device Letters 43 (12), 2053-2056, 2022 | 15 | 2022 |
| A passively temperature-compensated dual-frequency AlN-on-silicon resonator for accurate pressure sensing Q Xie, N Wang, C Sun, AB Randles, P Singh, X Zhang, Y Gu 2017 IEEE 30th International Conference on Micro Electro Mechanical Systems …, 2017 | 14 | 2017 |
| Performance estimation of GaN CMOS technology N Chowdhury, J Jung, Q Xie, M Yuan, K Cheng, T Palacios 2021 Device Research Conference (DRC), 1-2, 2021 | 13 | 2021 |
| Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform Q Xie, M Yuan, J Niroula, JA Greer, NS Rajput, N Chowdhury, T Palacios 2022 International Electron Devices Meeting (IEDM), 35.3.1-35.3.4, 2022 | 11 | 2022 |
| AlGaN/GaN-based multimetal gated high-electron-mobility transistor with improved linearity MT Azad, T Hossain, B Sikder, Q Xie, M Yuan, E Yagyu, KH Teo, ... IEEE Transactions on Electron Devices, 2023 | 10 | 2023 |
| Towards DTCO in high temperature GaN-on-Si technology: Arithmetic logic unit at 300° C and CAD framework up to 500° C Q Xie, M Yuan, J Niroula, B Sikder, S Luo, K Fu, NS Rajput, AB Pranta, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 10 | 2023 |
Tomás PalaciosMITVerified email at mit.edu
