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| Ultralow-current-density and bias-field-free spin-transfer nano-oscillator Z Zeng, G Finocchio, B Zhang, PK Amiri, JA Katine, IN Krivorotov, Y Huai, ... Scientific reports 3 (1), 1-5, 2013 | 239 | 2013 |
| Spin transfer nano-oscillators Z Zeng, G Finocchio, H Jiang Nanoscale 5 (6), 2219-2231, 2013 | 222 | 2013 |
| Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions P Khalili Amiri, ZM Zeng, J Langer, H Zhao, G Rowlands, YJ Chen, ... Applied Physics Letters 98 (11), 112507, 2011 | 217 | 2011 |
| Synthesis and photovoltaic effect of vertically aligned ZnO/ZnS core/shell nanowire arrays K Wang, JJ Chen, ZM Zeng, J Tarr, WL Zhou, Y Zhang, YF Yan, CS Jiang, ... Applied Physics Letters 96 (12), 123105, 2010 | 182 | 2010 |
| Liquid‐exfoliated black phosphorous nanosheet thin films for flexible resistive random access memory applications C Hao, F Wen, J Xiang, S Yuan, B Yang, L Li, W Wang, Z Zeng, L Wang, ... Advanced Functional Materials 26 (12), 2016-2024, 2016 | 175 | 2016 |
| Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory H Zhao, A Lyle, Y Zhang, PK Amiri, G Rowlands, Z Zeng, J Katine, H Jiang, ... Journal of Applied Physics 109 (7), 07C720, 2011 | 162 | 2011 |
| Giant spin-torque diode sensitivity in the absence of bias magnetic field B Fang, M Carpentieri, X Hao, H Jiang, JA Katine, IN Krivorotov, B Ocker, ... Nature communications 7 (1), 11259, 2016 | 157 | 2016 |
| High-power coherent microwave emission from magnetic tunnel junction nano-oscillators with perpendicular anisotropy Z Zeng, PK Amiri, IN Krivorotov, H Zhao, G Finocchio, JP Wang, JA Katine, ... ACS nano 6 (7), 6115-6121, 2012 | 145 | 2012 |
| Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers GE Rowlands, T Rahman, JA Katine, J Langer, A Lyle, H Zhao, JG Alzate, ... Applied Physics Letters 98 (10), 102509, 2011 | 114 | 2011 |
| Enhanced stability of black phosphorus field-effect transistors with SiO2 passivation B Wan, B Yang, Y Wang, J Zhang, Z Zeng, Z Liu, W Wang Nanotechnology 26 (43), 435702, 2015 | 110 | 2015 |
| The detection of H2S at room temperature by using individual indium oxide nanowire transistors Z Zeng, K Wang, Z Zhang, J Chen, W Zhou Nanotechnology 20 (4), 045503, 2008 | 105 | 2008 |
| Sulfur-doped black phosphorus field-effect transistors with enhanced stability W Lv, B Yang, B Wang, W Wan, Y Ge, R Yang, C Hao, J Xiang, B Zhang, ... ACS applied materials & interfaces 10 (11), 9663-9668, 2018 | 100 | 2018 |
| Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon Y Xu, X Shi, Y Zhang, H Zhang, Q Zhang, Z Huang, X Xu, J Guo, H Zhang, ... Nature communications 11 (1), 1330, 2020 | 98 | 2020 |
| Scaling behavior of hysteresis in multilayer MoS2 field effect transistors T Li, G Du, B Zhang, Z Zeng Applied Physics Letters 105 (9), 093107, 2014 | 92 | 2014 |
| Electrical performance of multilayer MoS2 transistors on high-κ Al2O3 coated Si substrates T Li, B Wan, G Du, B Zhang, Z Zeng Aip Advances 5 (5), 057102, 2015 | 83 | 2015 |
| Sub-200 ps spin transfer torque switching in in-plane magnetic tunnel junctions with interface perpendicular anisotropy H Zhao, B Glass, PK Amiri, A Lyle, Y Zhang, YJ Chen, G Rowlands, ... Journal of Physics D: Applied Physics 45 (2), 025001, 2011 | 83 | 2011 |
| Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling A Chen, Y Wen, B Fang, Y Zhao, Q Zhang, Y Chang, P Li, H Wu, H Huang, ... Nature communications 10 (1), 243, 2019 | 82 | 2019 |
| Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells ZM Zeng, P Khalili Amiri, G Rowlands, H Zhao, IN Krivorotov, JP Wang, ... Applied Physics Letters 98 (7), 072512, 2011 | 71 | 2011 |
